Home
Add Document
Sign In
Register
Basic Cell
Home
Basic Cell
SRAM Basic cellFull description...
Author:
Waqar Ishaq
21 downloads
217 Views
39KB Size
Report
DOWNLOAD .PDF
Recommend Documents
Set Idle Basic Parameters of Cell
Set Idle Basic Parameters of Cell
Gsm parameter
Cell Cycle and Cell Division
Cell Cycle and Cell Division
Cell Aging & Cell Death
mechanism of cell ageing and cell death are described in this presentation.Full description
Cell Aging & Cell Death
mechanism of cell ageing and cell death are described in this presentation.Description complète
Cell Signaling
Cell Refs
cell ref
Nerve Cell
Full description
Cell Structure3
cell biology
exercise on pcrFull description
Concentric Cell
Huawei concentric cell
Cell Cycle
biologi
Cell Planning
Deskripsi lengkap
Cell Update
Cell Update
Small Cell
Small CellFull description
Cell Membrane
cell membrane
Sky Cell
SkycellFull description
Cell Synchronization
Full description
Set Basic Parameters for Power Control of Cell(SET GCELLPWRBASIC
Full description
Solar Cell
paper about solar cell and its func
gratzel cell
Cell Reselection
GSM Cell Reselection descriptionFull description
Cell Kinetics
cinetica
Xane (Cell)
The structure and function of cell (In Kurdish)
SRAM cell 6T **I used this netlist for simulate the cell (0.35u) in three modes (writehold read) in a transient** .include modn.mod .include mod!.mod *sources **su!!l" #dd $ 0 dc 0.% **access control #wl wl 0 !ulse(0 0.% &m $00u $00u &m 'm) **data #l $ 0 dc 0.% #lr R$ 0 !ulse(0 0.% 5m $00u $00u $5m $) **control #r+w r+w 0 !ulse(0 0.% 0 $u $u $0m $) *de#ices **switches , $ -R /($) r+w10 01$e&0 $m1$e&0 ,R R$ R -R /($) r+w10 01$e&0 $m1$e&0 **mos transistors latch m$ 2 2R 0 0 modn w$u l0.35u m& 2 2R $ $ mod! w$u l0.35u m3 2R 2 0 0 modn w$u l0.35u m% 2R 2 $ $ mod! w$u l0.35u **mos transistors data access m5 wl 2 0 modn w$0u l0.35u m6 R wl 2R modn w$0u l0.35u *anal"sis .tran $u $5m 0 .o!tion !ost .end *"ou could chan4e the mos tansistors models SRAM cell 6T **I used this netlist for simulate the cell (0.35u) in three modes (writehold read) in a transient** .include modn.mod .include mod!.mod *sources **su!!l" #dd $ 0 dc 0.% **access control #wl wl 0 !ulse(0 0.% &m $00u $00u &m 'm) **data #l $ 0 dc 0.%
#lr R$ 0 !ulse(0 0.% 5m $00u $00u $5m $) **control #r+w r+w 0 !ulse(0 0.% 0 $u $u $0m $) *de#ices **switches , $ -R /($) r+w10 01$e&0 $m1$e&0 ,R R$ R -R /($) r+w10 01$e&0 $m1$e&0 **mos transistors latch m$ 2 2R 0 0 modn w$u l0.35u m& 2 2R $ $ mod! w$u l0.35u m3 2R 2 0 0 modn w$u l0.35u m% 2R 2 $ $ mod! w$u l0.35u **mos transistors data access m5 wl 2 0 modn w$0u l0.35u m6 R wl 2R modn w$0u l0.35u *anal"sis .tran $u $5m 0 .o!tion !ost .end *"ou could chan4e the mos tansistors models SRAM cell 6T **I used this netlist for simulate the cell (0.35u) in three modes (writehold read) in a transient** .include modn.mod .include mod!.mod *sources **su!!l" #dd $ 0 dc 0.% **access control #wl wl 0 !ulse(0 0.% &m $00u $00u &m 'm) **data #l $ 0 dc 0.% #lr R$ 0 !ulse(0 0.% 5m $00u $00u $5m $) **control #r+w r+w 0 !ulse(0 0.% 0 $u $u $0m $) *de#ices **switches , $ -R /($) r+w10 01$e&0 $m1$e&0 ,R R$ R -R /($) r+w10 01$e&0 $m1$e&0 **mos transistors latch m$ 2 2R 0 0 modn w$u l0.35u m& 2 2R $ $ mod! w$u l0.35u m3 2R 2 0 0 modn w$u l0.35u m% 2R 2 $ $ mod! w$u l0.35u
**mos transistors data access m5 wl 2 0 modn w$0u l0.35u m6 R wl 2R modn w$0u l0.35u *anal"sis .tran $u $5m 0 .o!tion !ost .end *"ou could chan4e the mos tansistors models SRAM cell 6T **I used this netlist for simulate the cell (0.35u) in three modes (writehold read) in a transient** .include modn.mod .include mod!.mod *sources **su!!l" #dd $ 0 dc 0.% **access control #wl wl 0 !ulse(0 0.% &m $00u $00u &m 'm) **data #l $ 0 dc 0.% #lr R$ 0 !ulse(0 0.% 5m $00u $00u $5m $) **control #r+w r+w 0 !ulse(0 0.% 0 $u $u $0m $) *de#ices **switches , $ -R /($) r+w10 01$e&0 $m1$e&0 ,R R$ R -R /($) r+w10 01$e&0 $m1$e&0 **mos transistors latch m$ 2 2R 0 0 modn w$u l0.35u m& 2 2R $ $ mod! w$u l0.35u m3 2R 2 0 0 modn w$u l0.35u m% 2R 2 $ $ mod! w$u l0.35u **mos transistors data access m5 wl 2 0 modn w$0u l0.35u m6 R wl 2R modn w$0u l0.35u *anal"sis .tran $u $5m 0 .o!tion !ost .end *"ou could chan4e the mos tansistors models SRAM cell 6T **I used this netlist for simulate the cell (0.35u) in three modes (writehold read) in a transient** .include modn.mod
.include mod!.mod *sources **su!!l" #dd $ 0 dc 0.% **access control #wl wl 0 !ulse(0 0.% &m $00u $00u &m 'm) **data #l $ 0 dc 0.% #lr R$ 0 !ulse(0 0.% 5m $00u $00u $5m $) **control #r+w r+w 0 !ulse(0 0.% 0 $u $u $0m $) *de#ices **switches , $ -R /($) r+w10 01$e&0 $m1$e&0 ,R R$ R -R /($) r+w10 01$e&0 $m1$e&0 **mos transistors latch m$ 2 2R 0 0 modn w$u l0.35u m& 2 2R $ $ mod! w$u l0.35u m3 2R 2 0 0 modn w$u l0.35u m% 2R 2 $ $ mod! w$u l0.35u **mos transistors data access m5 wl 2 0 modn w$0u l0.35u m6 R wl 2R modn w$0u l0.35u *anal"sis .tran $u $5m 0 .o!tion !ost .end *"ou could chan4e the mos tansistors models
×
Report "Basic Cell"
Your name
Email
Reason
-Select Reason-
Pornographic
Defamatory
Illegal/Unlawful
Spam
Other Terms Of Service Violation
File a copyright complaint
Description
×
Sign In
Email
Password
Remember me
Forgot password?
Sign In
Our partners will collect data and use cookies for ad personalization and measurement.
Learn how we and our ad partner Google, collect and use data
.
Agree & close