CPM3-0900-0010A

CPM3-0900-0010A Silicon Carbide Power MOSFET TM C3M MOSFET Technology

VDS

900 V

ID @ 25˚C

196 A

RDS(on)

10 m mΩ Ω

N-Channel Enhancement Mode Features

• • • • • •

Chip Outline

C3M SiC MOSFET technlogy High blocking voltage with low on-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Easy to parallel and simple to drive Gold back metal

Benefts

• • • •

Higher system efciency Reduced cooling requirements Increased power density Increased system switching frequency

Applications

• • • •

Solar inverters Motor Drive High voltage DC/DC converters Switch Mode Power Supplies

Part Number

Die Size (mm)

CPM3-0900-0010A

4.36 x 7.26

Maximum Ratings (TC = 25 ˚C unless otherwise specied) Symbol

Parameter

Value

Unit

900

V

VGS = 0 V, I D = 100 μA

Note

VDSmax

Drain - Source Voltage

VGSmax

Gate - Source Voltage (dynamic)

-8/+19

V

AC (f >1 Hz)

Note 1

VGSop

Gate - Source Voltage (static)

-4/+15

V

Static

Note 2

196

ID

Continuous Drain Current

ID(pulse)

Pulsed Drain Current

TJ , Tstg

Operating Junction and Storage Temperatu Temperature re

TProc

Maximum Processing Temperature

Note (1): When using MOSFET body diode V GSmax = -4V/+19V Note (2): MOSFET can also safely operate at VGS =0/+15 V Note (3): Assumes a R θJC < 0.24 K/W

1

Test Conditions

CPM3-0900-0010A Rev. B , 01-2017

140

A

VGS =15 V, V, TC = 25˚C VGS =15 V, V, TC = 100˚C

450

A

-55 to +175

˚C

325

˚C

Pulse width tP limited by T jmax

10 min. maximum

Note 3

Electrical Characteristics (TC = 25˚C unless otherwise specied) Symbol

Parameter

V(BR)DSS

Drain-Source Breakdown Voltage

VGS(th)

Gate Threshold Voltage

Min.

Typ.

Max.

900 1.7

2.4

3.5

1.7

Unit

Test Conditions

V

VGS = 0 V, I D = 100 μA

V

VDS = VGS, ID = 33 mA

V

VDS = VGS, ID = 33 mA, T J = 175ºC

IDSS

Zero Gate Voltage Drain Current

1

100

μA

VDS = 900 V, V GS = 0 V

IGSS

Gate-Source Leakage Current

10

250

nA

VGS = 15 V, V DS = 0 V

10

12

RDS(on)

Drain-Source On-State Resistance

15.4 97

gfs

Transconductance

Ciss

Input Capacitance

4500

Coss

Output Capacitance

350

Crss

Reverse Transfer Capacitance

12

Eoss

Coss Stored Energy

85

EON

Turn-On Switching Energy (Body Diode FWD)

td(on)

Turn-On Delay Time

48

Rise Time

17

Turn-Off Delay Time

60

Fall Time

14

Internal Gate Resistance

1.6

Qgs

Gate to Source Charge

68

Qgd

Gate to Drain Charge

80

Qg

Total Gate Charge

222

tf RG(int)

pF

VGS = 15 V, I D = 75 A VGS = 15 V, I D = 75A, TJ = 175ºC VDS= 20 V, IDS= 100 A VDS= 20 V, IDS= 100 A, TJ = 175ºC

VGS = 0 V, VDS = 600 V f = 1 MHz

Fig. 11

Fig. 4, 5, 6 Fig. 7

Fig. 17, 18

VAC = 25 mV μJ

1.35

Turn Off Switching Energy (Body Diode FWD)

td(off)

S

79

EOFF

tr

mΩ

Note

Fig. 16

mJ

VDS = 600 V, V GS = -4 V/15 V, I D = 100A, RG(ext) = 2.5Ω, L= 56 μH, TJ = 175ºC

Note 4

ns

VDD = 600 V, V GS = -4 V/15 V ID = 100 A, R G(ext) = 2.5 Ω, Timing relative to V DS Inductive load

Note 4

Ω

f = 1 MHz , VAC = 25 mV

nC

VDS = 600 V, V GS = -4 V/15 V ID = 100 A Per IEC60747-8-4 pg 21

0.83

Fig. 12

Reverse Diode Characteristics (TC = 25˚C unless otherwise specied)rse Diode Characteristics (TC = 25˚C unless otherwise specied) 1 Symbol VSD

IS IS, pulse

Parameter

Typ.

Max.

Unit

Test Conditions

4.6

V

VGS = -4 V, I SD = 70 A

4.1

V

VGS = -4 V, I SD = 70 A, TJ = 175 °C

Diode Forward Voltage

Fig. 8, 9, 10

Continuous Diode Forward Current

130

A

VGS = -4 V

Note 1, 3

Diode pulse Current

450

A

VGS = -4 V, pulse width tP limited by T jmax

Note 1

VGS = -4 V, I SD = 100 A, V R = 600 V dif/dt = 4600 A/μs, TJ = 175 °C

Note 1

trr

Reverse Recover time

Qrr

Reverse Recovery Charge

Irrm

Peak Reverse Recovery Current

32

ns

1700

nC

80

A

Note (4): For additional switching waveforms please refer to datasheet for packaged device. Part number C3M0010090K.

2

Note

CPM3-0900-0010A Rev. B , 01-2017

Typical Performance 350

350 Conditions: TJ = -55 °C tp = < 200 µs

300

VGS = 15V

VGS = 13V

300 VGS = 11V

) A ( 250 S D I , t n e 200 r r u C e c r 150 u o S n 100 i a r D

Conditions: TJ = 25 °C tp = < 200 µs

VGS = 15V VGS = 13V

VGS = 11V


VGS = 9V

VGS = 7V

50

VGS = 9V

VGS = 7V

50

0

0 0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

9.0

0.0

1.0

2.0

Drain-Source Voltage, V DS (V)

3.0

4.0

5.0

6.0

7.0

8.0

9.0


Figure 1. Output Characteristics TJ = -55 ºC

Figure 2. Output Characteristics T J = 25 ºC

350

2.0 Conditions: TJ = 175 °C tp = < 200 µs

300

VGS = 11V


Conditions: IDS = 75 A VGS = 15 V tp < 200 µs

1.8

VGS = 15V

1.6 ) . U . 1.4 P (

VGS = 9V

VGS = 13V

n O S D

1.2

R , e 1.0 c n a t 0.8 s i s e R 0.6 n O 0.4

VGS = 7V

50 0.2 0.0

0 0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

-50

9.0

-25

0

Figure 3. Output Characteristics T J = 175 ºC

100

125

150

175

Conditions: IDS = 75 A tp < 200 µs

18 TJ = 175 °C

16 ) s m 14 h O m 12 (

16 ) s m 14 h O m 12 (

TJ = -55 °C

10

VGS = 11 V VGS = 13 V

n O S D

10 R , e 8 c n a t s 6 i s e R 4 n O 2

TJ = 25 °C

8 6 4 2 0

VGS = 15 V

0 0

50

100

150

200

Drain-Source Current, I DS (A)

Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3

75

20 Conditions: VGS = 15 V tp < 200 µs

18

R , e c n a t s i s e R n O

50

Figure 4. Normalized On-Resistance vs. Temperature

20

n O S D

25

Junction Temperature, TJ (°C)


CPM3-0900-0010A Rev. B , 01-2017

250

300

-50

-25

0

25

50

75

100

125

Junction Temperature, TJ (°C)

Figure 6. On-Resistance vs. Temperature For Various Gate Voltage

150

175

Typical Performance 300

-8

Conditions: VDS = 20 V tp < 200 µs

250

-7

-6

-5

-4

-3

-2

-1

0 0

) A (

VGS = -4 V

) A (

TJ = 175 °C

-50

S D I

S D

I 200 , t n e r r u C 150 e c r u o S - 100 n i a r D

, t n e r r u C e c r u o S n i a r D

TJ = -55 °C TJ = 25 °C

VGS = 0 V

-100

-150 VGS = -2 V

-200

50

0.00

2.00

4.00

6.00

8.00

10.00

12.00

14.00

Figure 7. Transfer Characteristic for Various Junction Temperatures -7

-6

-5

-4

-3

-300

Drain-Source Voltage VDS (V)

Gate-Source Voltage, VGS (V)

-8

Figure 8. Body Diode Characteristic at -55 ºC

-2

-1

0

-8

-7

-6

-5

-4

-3

-2

-1

0 VGS = -4 V

) A (

-50

S D I

-100

VGS = -2 V

-150

-200

Conditions: TJ = 25°C tp < 200 µs

VGS = -4 V

) A (

-50

I , t n e r r u C e c r u o S n i a r D

VGS = 0 V

-100

VGS = -2 V

-250

Conditions: TJ = 175°C tp < 200 µs

Figure 10. Body Diode Characteristic at 175 ºC

4.0

16 Conditons VGS = VDS IDS = 33mA

3.5

) V (

S G

2.5

V 8 , e g a t l o V e 4 c r u o S e t a 0 G

V , e g 2.0 a t l o V 1.5 d l o h s e r 1.0 h T

0.5 0.0

-4 -50

-25

0

25

50

75

100

125

Junction Temperature TJ (°C)

Figure 11. Threshold Voltage vs. Temperature

4

Conditions: IDS = 100 A IGS = 250 mA VDS = 600 V TJ = 25 °C

12

3.0 h t

-250

-300


Figure 9. Body Diode Characteristic at 25 ºC

) V (

-150

-200

-300


0 0

S D

VGS = 0 V


-250

Conditions: TJ = -55°C tp < 200 µs

0

CPM3-0900-0010A Rev. B , 01-2017

150

175

0

50

100

150

200

Gate Charge, Q G (nC)

Figure 12. Gate Charge Characteristics

250

Typical Performance -7

-6

-5

-4

-3

-2

-1

0

-7

-6

-5

-4

-3

-2

-1

0

0 ) A (

VGS = 0 V

-50

S D I

0 ) A (

VGS = 0 V

S D I


VGS = 5 V

-100 VGS = 10 V

-150 VGS = 15 V

-200


VGS = 5 V

-100

VGS = 10 V

VGS = 15 V

-250

Conditions: TJ = -55 °C tp < 200 µs

Conditions: TJ = 25 °C tp < 200 µs

-300


-6

-5

-4

-3

-2

-1

-150

-200

-250

-300


Figure 13. 3rd Quadrant Characteristic at -55 ºC

-7

-50

Figure 14. 3rd Quadrant Characteristic at 25 ºC

180

0 0

160 VGS = 0 V

) A (

140

-50

) J µ 120 (

S D I


-100

VGS = 5 V

-150

VGS = 10 V

-200

VGS = 15 V

Conditions: TJ = 175 °C tp < 200 µs

-250

20 0

-300


S S O

E 100 , y g r e 80 n E d e r 60 o t S 40

0

100

) F 1000 p ( e c n a t i c a 100 p a C

400

500

600

700

800

900

1000

Figure 16. Output Capacitor Stored Energy

Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz

Ciss

300

Drain to Source Voltage, VDS (V)

Figure 15. 3rd Quadrant Characteristic at 175 ºC

10000

200

10000

Ciss

) F 1000 p ( e c n a t i c a 100 p a C

Coss

Crss

Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz

Coss

Crss

10

10

1

1 0

50

100

150


Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V)

5

CPM3-0900-0010A Rev. B , 01-2017

200

0

100

200

300

400

500

600

700


Figure 18. Capacitances vs. Drain-Source Voltage (0 - 900V)

800

900

Mechanical Parameters Parameter

Unit

Die Dimensions (L x W)

Typ 4.36 x 7.26

Exposed Source Pad Metal Dimensions

6.617 x 1.2


6.617 x 1.205

mm mm


6.116 x 1.2

mm

1.2 x 0.5

mm

180 ± 10%

µm

Frontside (Source) metallization (Al)

4

µm

Frontside (Gate) metallization (Al)

4

µm

0.8 / 0.1

µm

Gate Pad Dimensions Chip Thickness

Backside (Drain) metallization (Ni/Au)

mm

Chip Dimensions

4.36 1.2 8 9 2 . 0

0.307 0.5 5 6 0 . 0

6 1 1 . 6

6 2 . 7

7 1 6 . 6

0.336

8 9 2 . 0

1.2

1.205

0.079

6

CPM3-0900-0010A Rev. B , 01-2017

1.2

0.079

Notes

•

RoHS Compliance

The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. •

REACh Compliance

REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.

•

This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities , life-support machines, cardiac debrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air trafc control systems.

Related Links

•

SiC MOSFET Isolated Gate Driver reference design: www.wolfspeed.com/power/Tools-and-Support

•

Application Considerations for Silicon-Carbide MOSFETs: www.wolfspeed.com/power/Tools-and-Support

Copyright © 2015 - 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 7

CPM3-0900-0010A Rev. B , 01-2017

Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.wolfspeed.com/power

CPM3-0900-0010A

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