MICROWAVE INTERGRATED CIRCUITS
Huynh Phu Minh Cuong, Ph.D.
[email protected]
Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
Telecommunications Engineering -an introduction-
Telecommunications Engineering -an introduction-
Comm. Engineering
Comm. Network
Microwave Engineering & Integrated Circuits
Signal processing
Communications Engineering 1. Thông tin số
Communications Network 5. Mạng thông tin dữ liệu
(Digital Communications) 2. Thông tin vô tuyến (Wireless communications) 3. Lý thuyết thông tin và mã hóa (Information theory and coding) 4. Thông tin sợi quang (Optical fiber communications)
(Data Communication Networks Networks)) 6. Mạng cảm biến vô tuyến (Wireless sensor networks n etworks)) 7. Mật mã hoá và an ninh mạng (Cryptography and network security) 8. Chất lượng dịch vụ mạng (Network quality of service)
Signal Processing and Applications Microwave Engineering and ICs 9. Xử lý tín hiệu ngẫu nhiên 14. Mạch tích hợp siêu cao tần (Stochastic Signal Processing)
10. Xử lý số tín hiệu nâng cao (Advanced digital signal processing) 11. Xử lý ảnh nâng cao (Advanced image processing) 12. Xử lý đa phương tiện (Multimedia Processing) 13. Phương pháp tối ưu và ứng dụng (Opti. methods and applications)
(Microwave Integrated Circuits) 15. Thiết kế vi vi mạch cao tần (RF Integrated Circuit Design) 16. Thiết kế vi vi mạch tương tự nâng cao (Advanced analog IC design) 17. Kỹ thuật logic nhanh (Fast logic circuits) 18. Phân tích và Thiết kế Anten Anten (Antenna Analysis and Design)
Thiết kế , chế chế tạo tạo các mạch, thành phần và hệ thống siêu cao tần cho các hệ thống viễn thông vô tuyến và Radar. Vi mạch siêu cao
tần
Mạch và hệ thống siêu cao
tần
Anten và truyền sóng
Comm. Systems
MICROWAVE INTERGRATED CIRCUITS
Huynh Phu Minh Cuong, Ph.D.
[email protected]
Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
MICROWAVE INTERGRATED CIRCUITS Instructor: Office: Office Hours: E-mail:
Cuong Huynh P.M. (PhD) 114 B3 , HCMUT Tuesday :300-5:00 PM
[email protected]
Textbook:
[1] David M. Pozar , “Microwave Engineering”, John Wiley & Sons, Inc, 2012.
4th ed.,
References:
[2] Gonzalez, “Microwave Transistor Amplifiers”, Prentice Hall, 2nd ed. 1997 [3] I.D. Robertson, S. Lucyszyn , “RFIC and MMIC Design and Technology”, The Institution of Electrical Engineers, London, 2001 [4] Vũ Đình Thành, “Mạch Siêu Cao Tần”, NXB ĐHQG, 2006 [5] Vũ Đình Thành, “Kỹ Thuật Siêu Cao Tần”, NXB ĐHQG, 2004.
MICROWAVE INTERGRATED CIRCUITS Learning outcomes Understand effects of noise and nonlinearity distortion on microwave systems
and system parameters such as noise figure, input/output referred noise, 1-dB compression point and third-order intercept point. Analyze various microwave transceiver architectures and design system parameters for microwave transceivers. Analysis and design of microwave passive components such as power divider/combiner, directional coupler, hybrid coupler, circulator and T/R switch. Analysis and design of microwave filters using distributed elements. Analysis and design of microwave amplifiers including low noise amplifier, broadband amplifier and power amplifier. Analysis and design of microwave mixers and oscillators. Use microwave simulation soft-wares such as ADS, CST and SDH, and equipments such as network analyzer, spectrum analyzer, synthesizer and noise figure analyzer.
MICROWAVE INTERGRATED CIRCUITS Grading
Homework 25%
You are encouraged to work together with your classmates
on the homework. HW can be turned in via Email. No late homework will be graded Final Project 25% Report and PowerPoint presentation are required
Final Exams 50%
Closed book One single-sided A4 of notes is allowed
MICROWAVE INTERGRATED CIRCUITS Outline Chapter 1: Fundamentals of Microwave Engineering Chapter 2: System Parameters and Transceiver Architectures Chapter 3: Power Dividers and Directional Couplers Chapter 4: Microwave Amplifier Chapter 5: Microwave Filters Chapter 6: Oscillators and Mixers
MICROWAVE INTERGRATED CIRCUITS Chapter 1
Fundamentals of Microwave Engineering
Huynh Phu Minh Cuong
[email protected] Department of Telecommunications Faculty of Electrical and Electronics Engineering Ho Chi Minh city University of Technology
1.1 Introduction The field of radio frequency (RF) and microwave engineering generally covers the behavior of AC signals with frequencies in the range of 300 KHz to 300 GHz. RF signals :
300 KHz to 300 GHz
Microwave signals:
0.3 Ghz – 300 GHz
Millimeter-wave signals: 30 GHz – 300 GHz
Wave length: 1 Km – 1mm
Wave length: 1 m – 1mm
Wave length: 10 mm – 1mm
1.1 Introduction
ISM: Industrial, scientific and medical DBS: Direct broadcast satellite
1.1 Introduction Why do we need Microwave Engineering? – The key Engineering in: Wireless Communication Systems
Mordern RF/Microwave Transmitter Architectures
Radar Systems
1.1 Introduction The Design of Microwave Circuits is Different Because of the high frequencies (and short wavelengths), standard
circuit theory often cannot be used directly to solve microwave network problems. Microwave components often act as distributed elements, where
the phase of the voltage or current changes significantly over the physical dimension. Some lump components is not available at microwave frequency,
such as : Inductors
?
1.1 Introduction What is it ?
1.1 Introduction What is it ?
1.1 Introduction
1.1 Introduction
1.1 Introduction How to bias a transistor working at Microwave frequencies?
What happen with this inductor at microwave frequencies ?
1.1 Introduction Advantages of the use of higher frequencies •
•
Larger instantaneous BW for much information, Higher resolution for radar, imaging and sensing, bigger doppler shift
•
Reduced dimensions for components
•
Less interference from nearby applications
•
Higher speed for digital systems, signal processing, data transmission
•
Less crowded spectrum
•
Difficulty in jamming (military)
1.1 Introduction RF and Microwave Applications •
•
•
•
•
•
Wireless Communications (space, cellular phones, cordless phones, WLANs, Bluetooth, satellites etc.) Radar, sensing and Navigation (Airborne, vehicle, weather radars, GPS, MLS, imaging radar, police radars, etc.) RF Identification (Security, product tracking, animal tracking, toll collection etc.) Broadcasting (AM,FM radio, TV etc.) Automobiles and Highways (Collision avoidance, GPS, adaptive cruise control, traffic control etc.) Medical, Radio Astronomy and Space Exploration (radio telescopes, deep space probes, space monitoring etc.)
Introduction 1.1 Introduction
1.1 Introduction Cellular Communication System
1.1 Introduction
1.1 Introduction RF and microwave Engineering Applications: Electronic Warfare
1.1 Introduction Radio Frequency Integrated Circuits for Communications
1.1 Introduction
Transceiver Architecture
1.2 Fabrication Technologies for Microwave Integrated Circuits Microwave Integrated Circuits (MIC’s) consist of three types of circuit elements: – Distributed transmission lines (microstrip, strip, etc.) – Lumped elements (R, L and C) – Solid state/Semiconductor devices (FETs, BJTs, diodes, etc.) Microwave integrated circuits (MICs) Technologies replace bulky and expensive waveguide and coaxial components with small and inexpensive planar components for smaller size, lighter weight, lower power requirements, lower cost, and increased complexity. MICs can be fabricated in forms of HMIC and MMIC/RFIC
Hybrid MICs MIC MMIC/RFIC
Hybrid Microwave Integrated Circuits Monolithic Microwave Integrated Circuits Radio Frequency Integrated Circuits
1.2 Fabrication Technologies for Microwave Integrated Circuits Hybrid Microwave Integrated Circuits (HMICs): where
solid state devices and passive elements (both lumped and distributed) are bonded to its dielectric substrate. metallization for conductors & Single/multiple-level transmissionl ines with discrete circuit elements (such as transistors, inductors, capacitors, etc.) bonded to the substrate
1.2 Fabrication Technologies for Microwave Integrated Circuits Monolithic Microwave Integrated Circuits (MMICs): is a
type of circuit in which all active and passive elements as well as transmission lines are integrated into a bulk or onto the surface of a substance by some special processes such as: deposition, epitaxy, ion implantation, sputtering, evaporation, diffusion.
1.2 Fabrication Technologies for Microwave Integrated Circuits
1.2 Fabrication Technologies for Microwave Integrated Circuits
1.2 Fabrication Technologies for Microwave Integrated Circuits
1.2 Fabrication Technologies for Microwave Integrated Circuits
1.2 Technology and device for microwave integrated circuits MMIC/RFIC
Hybrid MICs
Designed by Cuong Huynh
1.2 Technology and device for microwave integrated circuits Hybrid versus Monolithic Microwave Integrated Circuits:
MMIC/RFIC has advantages over HMIC for Cost, Size and weight, Design flexibility, Broadband performance, Reproducibility, Reliability. RF/MW MMIC circuits are important as :
The trend in advanced microwave electronic systems is toward increasing integration, reliability, and volume of production with lower costs. The new millimeter-wave circuit applications demand the effects of bond-wire parasitics to be minimized and use of discrete elements to be avoided. New developments in military, commercial and consumer markets demand a new approach for mass production and for multi-octave bandwidth response in circuits. •
•
•
1.2 Technology and device for microwave integrated circuits
CMOS RFIC Technology
The metal – oxide – semiconductor field-effect
transistor (MOSFET) was first patented by Julius Edgar Lilienfeld in 1925, well before the invention of BJT. Due to the fabrication limitation, MOSFET
has not been used until the early years of 1960s. CMOS (Complementary MOS p- and n-type
device) was patented by Frank Wanlass in 1967, initiating a revolution in the semiconductor industry. CMOS
initially dominates in the digital circuit/systems while others for analog. Why CMOS now ? Low cost, high integration
and solution for SOC.
1.2 Technology and device for microwave integrated circuits
CMOS Technology CMOS Transistors Interconnect Diodes Resistors Capacitors Inductors Bipolar Transistors
1.2 Technology and device for microwave integrated circuits
CMOS Technology
Intel 45 nm CMOS Process
1.3 Simulation Software
Circuit Simulator: EM simulator:
ADS, Cadence Momentum, HFSS,IE3D, CST, SONET
1.4 Fundamentals of Microwave Engineering Transmission Lines
Transmission Lines
Characteristic impedance : Zo
Reflection Coefficient
Propagation constant: =
Transmission Line Impedance Standing Waves Power Matching on TL Voltage, current and power calculation at any location
jβ
1.4 Fundamentals of Microwave Engineering A transmission line is a distributed parameter network.
2
V ( x, ) x
2
2
( ).V ( x, )
2
I ( x, ) x
2
2
( ). I ( x, ) 43
1.4 Fundamentals of Microwave Engineering Transmission Lines
Characteristic impedance : Zo Propagation constant: =
V ( x)
I ( x )
V .e
V Z 0
(l )
Z ( x)
Z ( x)
Z 0
Z 0
1 ( x ) 1 ( x )
Z L
( x )
j.Z 0 .tg ( d )
Z 0 j.Z L .tg ( d )
Z( x ) Z 0 Z( x ) Z 0
e
. x
. x
V .e . x
V Z 0
e . x
Z L Z 0 Z L Z 0
( x ) (l ).e
S
jβ
1
1
2 d
VSWR
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Smith Chart: Z, Y, Z/Y – Section 2.4, [1]
z
r
jx
Re( ) j Im( )
z
1 1 z 1 z 1
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Z Smith Chart:
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Y Smith Chart:
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Z/Y Smith Chart:
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Impedance Matching
Using
lump elements
Using
transmission lines
ADS
Smith chart tool
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 HW1
2.8 2.14 2.11
1.1 Fundamentals Fundamentals of of Microwave microwave Engineering engineering 1.4 Scattering Parameters At microwave regime: S-parameters matrix, def ined in terms of tr aveling waves, is used instead. The scattering matrix represents the relation between the voltage incident waves on the ports to voltage reflected wave from the ports. S-parameters are measured with matched loads rather than open- or short-circuits.
At microwave frequencies, matched loads are relatively easy to realize. S-parameters are measured using Vector Network Analyzer (VNA).
S-Parameter Definition
V+n is the incident voltage wave on port n V− n is the reflected voltage wave from port n. The scattering matrix, or [S] matrix, is defined in relation to these incident
and reflected voltage waves.
S-Parameter Definition
S-Parameter Definition
S-Parameter Definition
S-Parameter Definition Example: Find [S]
