PREBOARD in ELECTRONICS ENGINEERING “Commit to the LORD whatever you do and HE will establish your plans” -Proverbs 16:3
c. Cannot be determined d. Sometimes True 8. For proper operation, the____________________ is forward-biased and the _____________________ is reverse-biased. a. base-emitter junction, collector-emitter junction
1. What is the bandgap energy for diamonds?
b. base-emitter junction, base-collector junction
a. 2.5eV b.1.1eV
c. collector-base junction, base-emitter junction
c.5.6eV d. 0.1eV
d. collector-emitter junction, collector-base junction
2. _______________ allows simplifying a one-port circuit
9. The ________________ of the bipolar transistor
to a current source in parallel with an impedance.
consists of an exponential voltage-dependent
a. Norton’s Theorem
current source tied between the collector and emitter,
b. Thevenin’s Therorem
and a diode (accounting for the base
c. Kirchoff’s Current Law
current) tied between the base and emitter.
d. Faraday’s Law of Magnetic Induction
a. r-paramter model
3. Charge carriers move in semiconductors via two
b. h-parameter model
mechanisms: _____ and _______.
c. small signal-model
a. drift and diffusion
d. large-signal model
b. drift and avalanche
10. The ______ stage provides a moderate voltage gain,
c. avalanche and diffusion
a moderate input impedance, and a moderate
d. none of the above
output impedance.
4. The diffusion current density is proportional to the
a. common-drain
_________ of the carrier concentration
b. common-collector
a. gradient
c. common-base
b. curl
d. common-emmiter
c. divergence
11. The ___________ provides a voltage gain less than
d. laplacian
unity, a high input impedance, and a low output
5. The ___________ is the minimum energy required to
impedance, serving as a good voltage buffer
dislodge an electron from its covalent
a. emitter follower
bond.
b. common base
a.barrier potential
c. common emitter
b. bandgap energy
d. common source
c. potential energy
12. MOSFETs operate in the ________ region if the
d. diffusion energy
drain voltage is more than one threshold below the gate
6. Under a high reverse bias voltage, pn pn junctions
voltage
break down, conducting a very high current.
a. triode
Depending on the structure and doping levels of the
b. diode
device, ____________ breakdown may occur.
c. negative resistance
a. Zener b. Avalanche
d. constant current
c. Drift d. answers a or b
13. A measure of the small-signal performance of
7. The statement” A voltage-dependent current source
voltage-dependent current sources is the
can form an amplifier along with a load resistor” is
_____________ defined as the change in the output
a. True b. False
current divided by the change in the input voltage.
a. impedance
current can be mostly steered to one side with a
b. conductance
differential input of about 4Vt.
c. transconductance
a. parabolic
d. reluctance
b. logarithmic
14. The impedance seen looking into the gate of a
c. hyperbolic tangent
MOSFET is equal to ________
d. exponential
a. infinity
20. As the frequency of operation increases,
b. r0
capacitances exhibit a ______________, reducing
c. 1 / gm
the gain. The gain thus rolls off at high signal
d. zero
frequencies.
15. The _______________ topology exhibits a nominal
a. same impedance
gain equal to one plus the ratio of
b. slightly higher impedance
two resistors. The circuit also suffers from a gain error
c. lower impedance
that is inversely proportional to the
d. significantly higher
gain of the op amp.
21. To obtain the frequency response, we must derive
a. noninverting amplifier
the ___________ of the circuit.
b. inverting amplifier
a. logarithmic behavior
c. summing amplifier
b. roll-off rate
d. voltage follower
c. gain
16. Placing a bipolar device around an op amp provides
d. transfer function
a _____________function
22. A capacitance tied between the input and output of
a. linear
an inverting amplifier appears at the input
b. parabolic
with a factor equal to one minus the gain of the amplifier.
c. exponential
This is called _______________.
d. logarithmic
a. Capacitance-gain effect
17. Op amps suffer from various imperfections, including
b. Miller effect
dc offsets and input bias currents.
c. Thevenin effect
These effects impact the performance of various circuits,
d. Faraday effect
most notably,____________.
23. The ________of a feedback system can, in principle,
a. zero-level detector
be obtained by breaking the loop,
b. summing amplifier
injecting a test signal, and calculating the gain as the
c. differentiators
signal goes around the loop. It determines many
d. integrators
properties of feedback systems, e.g., gain, frequency
18. Stacking a transistor atop another forms a _______
response, and I/O impedances.
structure, resulting in a high output
a. loop gain
impedance.
b. transfer function
a. darlington
c. negative feedback
b. stack
d. signal flow
c. cascade
24. To avoid oscillation, the gain crossover frequency
d. cascode
must __________the phase crossover frequency.
19. Bipolar differential pairs exhibit a
a. fall below
____________input/output characteristic. The tail
b. rise above
c. be equal
b. Bode plot
d. a factor of
c. Gain-frequency curve
25. The crossover distortion resulting from the dead
d. Performance graph
zone can be reduced by biasing the push-pull
31. What do you call the ohmic resistance of the
transistors for a small quiescent current
semiconductor?
a. True
a. Dynamic resistance
b. False
b. Static resistance
26. In low-distortion applications, the output stage may
c. Bulk resistance
be embedded in a _________
d. Semiconductor resistance
to suppress the nonlinearity.
32. The metaphor used to describe the action of an SCR
a. open loop
when it is used to protect a load against supply.
b. positive feedback loop
a. Surge
c.negative feedback loop
b. Limiter
d. none of the above
c. Breaker
27. A push-pull stage operating at high temperatures
d. Crowbar
may suffer from _____________, whereby
33. A value that tells you how much to reduce the power
the elevated temperatures allow the output transistors to
rating for each degree above the reference temperature
draw higher currents, which in turn
given on the data sheet.
makes them dissipate even more.
a. Reduction factor
a. avalanche effect
b. Derating factor
b. diffusion effect
c. Temperature coefficient
c. thermal runaway
d. Attenuation
d. thermal breakover
34. It is the process of adding impurity element to an
28. The ___________ response provides a sharper
intrinsic semiconductor to change its conductivity.
transition than Butterworth at the cost of some
a. Impurification
ripple in the passband and stopbands. It contains n
b. Crystallization
complex poles on an ellipse
c. Recombination
a. Thomas
d. Doping
b. Buttord
35. A condition where the transistor is operating at the
c. Elliptic
upper end of the load line with a base current that is
d. Chebyshev
one-tenth of the collector current.
29. A phenomenon that occurs for large reverse voltages
a. Full saturation
across a pn junction where the free electrons are
b. Hard saturation
accelerated to such high speeds that they can dislodge
c. Mid saturation
valence electrons.
d. Avalanche
a. Piezoelectric effect
36. The pattern appearing on an oscilloscope when
b. Zener Effect
harmonically related signals are applied to the horizontal
c. Recombination
and vertical inputs.
d. Avalanche effect
a. Lissajous’ pattern
30. A graph showing the gain or phase performance of
b. Shockley’s pattern
an electronic circuit at various frequencies.
c. Braun’s pattern
a. Ogive graph
d. Lee de Forest’s pattern
37. A connection of two transistors connected with
44. Which of the following special purpose diode doesn’t
positive feedback to simulate the action of a thyristor.
have depletion layer?
a. Complementary
a. Tunnel diode
b. Latch
b. Schottky diode
c. Push pull
c. Varactor diode
d. Switch
d. Zener diode
38. It refers to the average amount of time between the
45. It is define as a large initial current that flows through
creation and recombination of a free electron and a hole.
the diode of a rectifier.
a. Recombination time
a. Bleeder current
b. Delay time
b. Surge current
c. Conduction time
c. Transient current
d. Life time
d. Saturated current
39. A filter that blocks a signal with at most one
46. It is defined as a four-layer semiconductor device
frequency.
that acts as a latch.
a. Brick wall filter
a. Thyrector
b. Cauer filter
b. Transistor
c. Notch filter
c. Transformer
d. Butterworth filter
d. Thyristor
40. A term use to describe the death of amplification.
47. It is the value of the input voltage that switches the
a. Oscillation
output of a comparator.
b. Attenuation
a. Trigger
c. Degradation
b. Trip point
d. Hysteresis
c. Latch
41. The voltage that provides the border between the
d. Knee
ohmic region and the constant current region of a
48. It is a device that acts like two back-to-back-zener
depletion-mode device when the gate to source voltage
diodes.
is zero.
a. Varistor
a. Threshold voltage
b. Varactor
b. Peak point voltage
c. Complementary zener
c. Valley point voltage
d. Zener latch
d. Pinch off voltage
49. What do you call a thin slice of crystal used as a
42. A basic circuit that a designer can modify to get more
chassis for integrated components.
advanced circuits.
a. Substrate
a. Model circuit
b. Base
b. Miniature circuit
c. Wafer
c. Prototype
d. Impurity
d. Hybrid
50. What is the other term for zener effect?
43. It is a comparator with hysteresis.
a. Avalanche effect
a. Schmitt trigger
b. Piezoelectric effect
b. Hysteresis circuit
c. High field emission
c. Trigger-comparator
d. Breakdown effect
51. Calculate the efficiency of a transformer-coupled
a.1.2V b. 2.5V c. 2.7V d. 3.1V
class A amplifier for a supply of 12 V and outputs of 6V.
61. Calculate the filter dc Voltage of a full-wave rectifier
a.50% b. 25% c. 12.5% d. 10%
with a 100-μF filter capacitor connected to a load
52. For a class B amplifier providing a 20-V peak to a
drawing to a load drawing 50 mA if the peak rectifier
16-Ω load (speaker) and a power supply of Vcc = 30 V,
voltage is 30 V.
determine the circuit efficiency.
a.25.4V b. 26.1V c. 27.9V d. 28.6V
a.45.2% b. 66.67% c. 78.5% d. 52.3%
62. Calculate the ripple of a capacitor filter for a peak
53. For a class B amplifier using a supply of Vcc = 30 V
rectified voltage of 30 V, capacitor C= 100μF, and a load
and driving a load of 16Ω, determine the maximum
current of 50 mA.
output power.
a.3.7% b. 4.3% c. 5.1% d. 6.9%
a.28.13W b. 35.81W c. 41.23W d. 54.91W
63. Calculate the input bias currents at the non-inverting
54. For a class B amplifier using a supply of Vcc = 30 V
and inverting terminal respectively of an op=amp having
and driving a load of 16Ω, determine the transistor
specified values of IIO = 5nA and IIB = 30 nA.
dissipation
a.Both 32.5nA b. Both 27.5nA
a.3.7W b. 4.7W c. 5.7W d. 6.7W
c. 27.5nA; 32.5nA d. 32.5nA; 27.5nA
55. Calculate the efficiency of a class B amplifier for a
64. Determine the cutoff frequency of an op-amp having
supply of Vcc = 24 V with peak output voltages of VL (p)
specified values B1 = 1 MHz and AVD = 200 V/mV.
= 22 V.
a.4Hz b. 5Hz c. 1kHz d. 1MHz
a.62% b. 68% c. 72% d. 78%
65. For an op-amp having a slew rate of SR = 2V/μs,
56. Calculate the total harmonic distortion for the
what is the maximum closed loop voltage gain that can
following amplitude components: fundamental amplitude
be used when the input signal varies by 0.5 V in 10 μs?
of 2.5 V, second harmonic amplitude of 0.25 V, third
a.10 b. 20 c. 30 d. 40
harmonic amplitude of 0.1 V, and fourth harmonic
66. Determine the output voltage of an op-amp for input
amplitude of 0.05 V.
voltages of Vi1 = 150 μV and Vi2 = 140 μV. The amplifier
a.11% b. 12% c. 13% d. 14%
has a differential gain of Ad =4000 and the value of
57. Determine what maximum dissipation will be allowed
CMRR is 100.
for an 80-W silicon transistor (rated at 25degC) if the
a.32.6mV b. 45.8mV c. 51.9mV d. 66.7mV
reading is required above by a derating factor of 0.5W/C
67. If an amplifier with gain of -1000 and feedback of β=-
at case temperature of 125C.
0.1 has a gain change of 20% due to temperature;
a.25W b. 30W c. 35W d. 40W
calculate the change in gain of the feedback amplifier
58. A silicon power transistor is operated with a heat sink
a.10% b. 0.2% c. 20% d. 1%
(1.5C/W ) the transistor, rated at150 W (25C ) , and the
68. A transistor has a collector current of 10mA and a
mounting insulation has 0.6C/W. What maximum power
base current of 40uA. What is the current gain of the
can be dissipated if the ambient temperature is 200C.
transistor
a.61.5W b. 71.5W c. 81.5W d. 91.5W
a.20 b. 30 c. 40 d. 50
59. A dc voltage supply provides 50 V when the output is
69. A 2N3904 has VCE=10V and IC=20mA. What is the
unloaded. When connected to a load, the output drops to
power dissipation?
56 V. Calculate the value of voltage regulation.
a.0W b. 100mW c. 200mW d. 2N3904 is limited to
a.4.1% b. 7.1% c. 5.7% d. 10.7%
10mW
60. Calculate the ripple voltage of a full-wave rectifier
70. A zener regulator has an input voltage that may vary
with a 100-μF filter capacitor connected to a load
from 22 to 30V. If the regulated output voltage is 12V
drawing to a load drawing 50 mA
and the load resistance varies from 140Ω to 10kΩ, what
78. What is the typical energy gap of silicon
is the maximum allowable series resistance?
semiconductor?
a.140Ω b. 76.4 Ω c. 280 Ω d. 117 Ω
a.0.03eV b. 0.67eV c. 1.1eV d. 1.43eV
71. It is sometimes called hot-carrier diode.
79. Which of the following semiconductor material is
a. Shockley diode
sensitive to temperature change?
b. Schottky diode
a. Carbon
c. Gunn Diode
b. Germanium
d. Tunnel diode
c. Silicon
72. A zener regulator has an input voltage ranging from
d. GaAs
15 to 20V and a load current ranging from 5 to 20mA. If
80. It occurs when a conduction-band electron loses
the zener voltage is 6.8V, what is the maximum
energy and falls back into a hole in the valence band.
allowable series resistance?
a. Ionization
a.750Ω b. 410 Ω c. 1000Ω d. 2000 Ω
b. Doping
73. A 2N5668 has VGS(off)=-4V and IDSS=5mA. What
c. Electron-hole
are the gate voltage and drain current at the half cutoff
d. Recombination
point?
81. Which of the following is not a pentavalent atom?
a.-1V; 1mA b. -2V; 1.25mA c. -4V; 5mA d. 0; 0
a. Phosphorus
74. A network that employ diodes to remove away a
b. Antimony
portion of an input signal without distorting the remaining
c. Arsenic
part of the applied waveform
d. Boron
a. Clamper
82. How does minority carriers produced?
b. Rectifier
a. Doping
c. Regulator
b. Ionization
d. Clipper
c. Thermally produced
75. Atom with four valence electrons is called ____.
d. Light energy
a. Trivalent
83. It is an extremely small amount of current that exists
b. Tetravalent
in a reverse biased diode.
c. Quadvalent
a. Forward saturated current
d. Pentavalent
b. Reversed saturated current
76. The term applied to any semiconductor material that
c. Forward leakage current
has been carefully refined to reduce the number of
d. Zener current
impurities to a very low-essentially as pure as can be
84. What is the typical reverse saturated current of a
made available through modern technology.
silicon diode?
a. Intrinsic
a.1uA b. 10uA c. 10pA d. 1pA
b. Crystal
85. What is the typical range of reverse breakdown
c. Lattice
voltage of silicon diode?
d. Solid
a. 2-200V
77. Who discovered electrons in 1897?
b. 50-1kV
a. J. Thompson
c. 50-400V
b. E. Rutherford
d. 100-10kV
c. J. Chadwick
86. The time required for the minority carriers to return to
d. J. Maxwell
the majority carrier state in the opposite material.
a. Transition time
95. Which of the following can be used as universal
b. Time constant
gate?
c. Rise time
a. AND
d. Storage time
b. OR
87. Determine the thermal voltage of a diode at 27°C
c. NAND
(common temperatures for components in an enclosed
d. NOT
operating system)
96. A logic gate that produces a HIGH output only when
a.20mV b. 26mV c. 30mV d. 1V
its two inputs are at opposite levels.
88. What is the knee voltage of a silicon diode at 75°C?
a. OR
a.0.7V b. 2.1V c. 0.58V d. 0V
b. XOR
89. At 20°C, the reverse saturation current of a silicon
c. NOR
diode is 10nA, what is its value when the temperature
d. XNOR
increases to 100°C?
97. The complement of a sum of variables is equal to the
a.0.32uA b. 50nA c. 10nA d. 0A
product of the complements
90. A silicon diode is in series with 1kΩ resistor and a
of the variables.
forward biasing voltage supply of 10V. If r’d is 10Ω, what
a. Boolean’s Rule
is the anode to cathode current and voltage?
b. De Morgan’s Theorems
a. 9.3mA, 0.7V
c. Baudot’s Law
b. 9.3mA,0.79V
d. Karnaugh’s Rule
c. 9.21mA,0.7V
98. Which of the following expression is in standard SOP
d. 9.21mA,0.79V
form?
91. What is the wavelength of the light produced by an
a. F=ABC+AB’C+A’B’C’
LED with an energy gap level of 1.43 eV?
b. F=A’+BC+ABC’
a. 569nm
c. F=AB+AC+BC
b. 669nm
d. All of the above
c. 768nm
99. In a 4 variable K-map, what is the binary value for
d. 869nm
the cell in the lower right corner?
92. What does FPGA stands for?
a. 0000
a. Field p-type gate array
b. 1111
b. Field programmable gate arrangement
c. 0101
c. Field programmable gate array
d. 1010
d. FET programmable gate array
100. It is a digital circuit that adds two bits and an input
93. Find the 2’s complement of 10110010.
carry to produce a sum and an output carry.
a. 01001101
a. Half adder
b. 01001100
b. Full adder
c. 11001101
c. Demultiplexer
d. 10111101
d. Encoder
94. Convert the binary number 11000110 to gray code
101. Which of the following is the invalid state for RS flip
a. 1011101
flop?
b. 10100111
a. S=0; R=0
c. 10000101
b. S=0; R=1
d. 10100101
c. S=1; R=0
d. S=1; R=1
a. 0000
102. In T flip flop, T stands for:
b. 1111
a. Time
c. 1101
b. Trip
d. 1100
c. Transient
112. The difference between the two op-amp input
d. Toggle
currents is called ______.
103. How many flip-flop/s is/are need to produce 2kHz
a. Input Offset Current
frequency from 8kHz input?
b. Input Bias Current
a.1 b. 2 c.3 d. 4
c. Op-Amp Input Current
104. A flip-flop is in the toggle condition when:
d. Differential Mode Current
a. J=0; K=0
113. A circuit whose output voltage is proportional to the
b. J=0; K=1
area under the curve of the input voltage.
c. J=1; K=0
a. Differentiator
d. J=1; K=1
b. Comparator
105. How many flip-flops are needed to produce 4-bit
c. Integrator
asynchronous counter?
d. Summing Amplifier
a.2 b. 4 c. 6 d. 8
114. A circuit whose output voltage is proportional to the
106. How many flip-flops are needed to produce
slope of the input voltage.
modulus-12 asynchronous counter?
a. Differentiator
a.4 b. 8 c. 12 d. 10
b. Comparator
107. What do you call the number of unique states
c. Integrator
through which a counter will
d. Summing Amplifier
sequence?
115. A filter response that exhibits an equiripple
a. State
amplitude response in the pass band.
b. Sequence
a. Notch Filter response
c. Modulus
b. Chebyshev Response
d. Counts
c. Bessel Response
108. Asynchronous counters are known as:
d. Butterworth Response
a. ripple counters
116. A filter response that exhibits maximum flatness
b. multiple clock counters
possible in the pass band.
c. decade counters
a. Notch Filter response
d. modulus counters
b. Chebyshev Response
109. The modulus of a counter is
c. Bessel Response
(a) the number of flip-flops
d. Butterworth Response
(b) the actual number of states in its sequence
117. The ____ gate is called the “all or nothing” gate.
(c) the number of times it recycles in a second
a.) AND
(d) the maximum possible number of states
b.) OR
110. Three cascaded modulus-10 counters have an
c.) NOR
overall modulus of
d.) XOR
a.30 b. 100 c. 1000 d. 10000
118. Express the Boolean function F= xy + x’z in a
111. The terminal count of a modulus-13 binary counter
product of maxterm form.
is
a. F = (x’+y)(x+y)(y+z)
b. F = (x’+y)(x+z)(x+y)
state (cutoff) at rates that typically range from 10 kHz to
c. F = (x+y’)(x+z)(y+z)
40 kHz.
d. F = (x’+y)(x+z)(y+z)
a. switched-mode power supply
119. In switching transistors, what do you call the time
b. regulated power supply
between the changing state of the input and the
c. unregulated power supply
beginning of a response in the output?
d. dc power supply
a. Delay time
125. Logarithmic amplifiers, together with exponential
b. Rise time
amplifiers are used to perform analog multiplication.
c. Fall time
These can be constructed by using an operational
d. Storage time
amplifier and a diode. Where and how should the diode
120. The current gain of a common-base BJT
be placed so that the circuit will work as a logarithmic
configuration is _____________.
amplifier?
a. just less than 1
a. Forward biased in the feedback path, replacing Rf of
b. negligibly small
an inverting op-amp
c. very high
b. Reversed biased in the feedback path, replacing Rf of
d. just greater than 1
an inverting op-amp
121. It is desired to design a phase-shift oscillator using
c. Forward biased in the input, replacing Ri of an
an FET having gm= 5000 , rd= 40 and a feedback circuit
inverting op-amp
whose resistance value R= 10 . Select the value of the
d. Reversed biased in the input, replacing Ri of an
capacitor appropriate for oscillator operation of 1 kHz.
inverting op-amp
a. 6.5nF
126. The time sequence of inputs, outputs and flip-flop
b. 1.62nF
states can be enumerated in a _______. This consists of
c. 8.12nF
four sections labeled the present state, input, output and
122. The current gain of a Darlington pair is called
next state.
________.
a. state table
a. superbeta
b. truth table
b. beta
c. state diagram
c. alpha
d. truth diagram
d. superalpha
127. In digital design of combinational logic circuits, what
123. The total dB gain of a three stage system is 120dB.
do you call the term that refers to the connection of the
Determine the dB gain of the third stage if the second
output of one device to the input of a similar device
stage is twice the dB gain of the first stage and the third
allowing one device to drive the other in order to expand
is 2.7 times the dB gain of the first.
the operational capability?
a. 57 dB
a. Cascading
b. 30 dB
b. Cascading
c. 21 dB
c. Fanning
d. 62 dB
d. Cross-connecting
124. A ______ is a dc–dc converter with an unregulated
128. In computers, what do you call a relatively small,
input dc voltage and a regulated output voltage. The
high-speed memory that stores the most recently used
converter circuitry consists of arrangements of inductor,
instructions or data from the larger but slower main
capacitors, diodes, and transistors. The transistors are
memory?
switched between the ON state (saturation) and the OFF
a. cache memory
b. register
135. In which of the following applications is a pulsating
c. random access memory
dc voltage suitable?
d. flash memory
a. Battery charger
129. What is the ratio of the input impedance with series
b. Radio
feedback to that without feedback?
c. Stereo system
a. 1 + BA
d. Computer
b. BA
136. Across which of the following components of a
c. B
power supply does the average (dc) voltage exist?
d. 1
a. Diodes
130. Which of the following is required to start
b. Secondary of transformer
oscillation?
c. Capacitor filter
a. BA > 1
d. None of the above
b. The phase shift around the feedback network must be
137. What is the purpose of an additional RC filter
180 degrees.
section in a power supply circuit?
c. Both BA > 1 and the phase shift around the feedback
a. Increase the dc voltage component
network must be 180 degrees.
b. Increase the ac voltage component
d. None of the above
c. Decrease the ac voltage component
131. Only the condition BA = _____ must be satisfied for
d. None of the above
self-sustained oscillations to result.
138. In a simple series regulator circuit, which of the
a. 0
following components is the controlling element?
b. -1
a. Load resistor
c. 1
b. Zener diode
d. None of the above
c. Transistor
132. In the IC phase-shift oscillator, what should the ratio
d. None of the above
of feedback resistor Rf to R1 be?
139. What is the range of gm for JFETs?
a. Zero
a. 1 uS to 10 uS
b. Greater than -29
b. 100 uS to 1000 uS
c. Less than 29
c. 1000 uS to 5000 uS
d. Any value
d. 10000 uS to 100000 uS
133. In the Wien bridge oscillator, which of the following
140. For what value of ID is gm equal to 0.5 gm0?
is (are) frequency-determining components?
a. 0 mA
a. Both resistors
b. 0.25 IDSS
b. Both capacitors
c. 0.5 IDSS
c. Both resistors and capacitors
141. Which of the following transistor has depletion and
d. None of the above
enhancement types?
134. What is the typical value of quality factor for crystal
a. BJT
oscillators?
b. JFET
a. 20,000
c. MOSFET
b. 1,000
d. Diode
c. 100
142. What is the level of IG in an FET?
d. 10
a. Zero b. Equal to ID
c. Depends on VDS
b. 14
d. Undefined
c. 32
143. The region to the left of the pinch-off locus is
d. 11
referred to as the _____ region.
150. One eV is equal to _____ J.
a. saturation
a. 6.02 E23
b. cut-off
b. 1.6 E–19
c. ohmic
c. 6.25 E18
d. None of the above
d. 1.66 E–24
144. The drain current will always be one-fourth of IDSS
151. What unit is used to represent the level of a diode
as long as the gate-to-source voltage is _____ the pinch-
forward current?
off value.
a. pA
a. one-fourth
b. nA
b. one-half
c. A
c. three-fourths
d. mA
d. None of the above
152. Calculate the power dissipation of a diode having
145. How many terminals can a MOSFET have?
ID = 40 mA.
a. 2
a. 28 mW
b. 3
b. 28 W
c. 4
c. 280 mW
d. 3 or 4
153. Which capacitance dominates in the reverse-bias
146. It is the insulating layer of _____ in the MOSFET
region?
construction that accounts for the very desirable high
a. Depletion
input impedance of the device.
b. Conversion
a. SiO
c. Diffusion
b. GaAs
d. None of the above
c. SiO2
154. Which capacitance dominates in the forward-bias
d. HCl
region?
147. The transfer curve is not defined by Shockley's
a. Depletion
equation for the _____.
b. Conversion
a. JFET
c. Diffusion
b. DMOSFET
d. None of the above
c. EMOSFET
155. What does a high resistance reading in both
d. None of the above
forward- and reverse-bias directions indicate?
148. Which of the following FETs has the lowest input
a. A good diode
impedance?
b. An open diode
a. JFET
c. A shorted diode
b. DMOSFET
d. A defective ohmmeter
c. EMOSFET
156. Determine the nominal voltage for the Zener diode
d. None of the above
at a temperature of 120° C if the nominal voltage is 5.1
149. How many orbiting electrons does the germanium
volts at 25° C and the temperature coefficient is 0.05%/°
atom have?
C.
a. 4
a. 4.6 V
b. 4.86 V
163. Which of the following techniques can be used in
c. 5.1 V
the sinusoidal ac analysis of transistor networks?
d. 5.34 V
a. Small-signal
157. What is the maximum power rating for LEDs?
b. Large-signal
a. 150 mW
c. Small- or Large-signal
b. 500 mW
d. None of the above
c. 1 W
164. The _____ model suffers from being limited to a
d. 10 W
particular set of operating conditions if it is to be
158. The _____ diode model is employed most
considered accurate.
frequently in the analysis of electronic systems.
a. hybrid
a. ideal
b. re
b. practical
c. Thevenin
c. piecewise-linear
d. None of the above
d. None of the above
165. What is the unit of the parameter ho of a BJT?
159. At what region of operation is the base-emitter
a. Volt
junction forward biased and the base-collector junction
b. Siemen
reverse biased?
c. Ohm
a. Saturation
d. Unitless
b. Linear or Active
166. What is the typical value of the current gain of a
c. Cut-off
common-base configuration?
d. None of the above
a. Less than 1
160. For the BJT to operate in the saturation region, the
b. Between 1 and 50
base-emitter junction must be _____-biased and the
c. Between 100 and 200
base-collector junction must be _____-biased.
d. Undefined
a. forward, forward
167. What does the negative sign in the voltage gain of
b. forward, reverse
the common-emitter fixed-bias configuration indicate?
c. reverse, reverse
a. The output and input voltages are 180º out of phase.
d. reverse, forward
b. Gain is smaller than 1.
161. Which of the following voltages must have a
c. Gain is larger than 1.
negative level (value) in any NPN bias circuit?
d. None of the above
a. VBE
168. The _____ configuration is frequently used for
b. VCE
impedance matching.
c. VBC
a. fixed bias
d. None of the above
b. voltage-divider bias
162. Which of the following is referred to as the reverse
c. emitter-follower
transfer voltage ratio?
d. collector feedback
a. hi
GOD BLESS!!!
b. hr
Prepared by:
c. hf
Engr. Denver G. Magtibay
d. ho
